lead-free green ds30836 rev. 2 - 1 1 of 4 dmn2005lp www.diodes.com diodes incorporated dmn2005lp n-channel enhancement mode field effect transistor low on-resistance low gate threshold voltage fast switching speed low input/output leakage ultra-small surface mount package lead free by design/rohs compliant (note 2) "green" device (note 4) esd protected gate maximum ratings @ t a = 25 c unless otherwise specified d g h b c l n a m k mechanical data characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v drain current per element (note 1) continuous pulsed (note 3) i d 200 250 ma total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. case: dfn1006-3 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals connections: see diagram terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 marking: see last page ordering & date code information: see last page features under development new product dfn1006-3 dim min max typ a 0.95 1.075 1.00 b 0.55 0.675 0.60 c 0.45 0.55 0.50 d 0.20 0.30 0.25 g 0.47 0.53 0.50 h 0 0.05 0.03 k 0.10 0.20 0.15 l 0.20 0.30 0.25 m 0.35 n 0.40 all dimensions in mm d s g top view esd protected source body diode e q uivalent circuit gate protection diode gate d ra i n
under development notes: 5. short duration test pulse used to minimize self-heating effect. ds30836 rev. 2 - 1 2 of 4 dmn2005lp www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (per element) (note 5) drain-source breakdown voltage bv dss 20 v v gs = 0v, i d = 100 a zero gate voltage drain current i dss 10 a v ds = 17v, v gs = 0v gate-source leakage i gss 1 a v gs = 8v, v ds = 0v on characteristics (per element) (note 5) gate threshold voltage v gs(th) 0.53 1.2 v v ds =v gs , i d = 100 a static drain-source on-resistance r ds (on) 2.3 5.0 v gs = 1.8v, i d = 200ma v gs = 2.7v, i d = 200ma forward transfer admittance |y fs | 8 s v ds =10v, i d = 1.0a new product 0 0 12 3 4 5 v drain-source voltage (v) fi g .1 t y pical output characteristics ds , i drain current (a) d , 0.3 0.6 0 . 9 tbd v , gate-source voltage (v) fig. 2 gs reverse drain current vs. source-drain volta g e 100 0 1000 i, d drain current (ma) 200 300 400 500 600 700 800 900 0.4 0.8 1.2 1.6 2 tbd t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch v gate threshold voltage (v) gs(th), 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -75 -50 -25 025 50 75 100 125 150 tbd 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 0.2 0.4 0.6 0.8 1.0 tbd
under development ds30836 rev. 2 - 1 3 of 4 dmn2005lp www.diodes.com new product i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 0.1 1 0.2 0.4 0.6 0.8 1.0 tbd 6 0.2 0.1 0 0.6 0.5 0.4 0.3 0.7 1 . 0 0.9 0.8 0 v , gate-source fig. 6 static drain-source, on-resistance vs. gate-source volta g e gs voltage (v) 4 2 tbd i , drain current (a) fig. 7 d on-resistance vs. drain current and gate volta g e 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 11.2 tbd t , junction temperature ( c) fig. 8 j static drain-source, on-resistance vs. tem p erature -50 -25 0 25 50 75 100 125 150 0 0.2 0.3 0 .5 0.1 0.4 tbd i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 tbd i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v , source fig. 10 reverse drain current vs. source-drain volta g e sd drain- voltage (v) tbd
under development ds30836 rev. 2 - 1 4 of 4 dmn2005lp www.diodes.com new product important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated. dm marking information dm = product type marking code, dot denotes collector side notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping DMN2005LP-7 dfn1006-3 3000/tape & reel ordering information (note 6) 1000 i , drain current (ma) d fig. 11 forward transfer admittance vs. drain current 1 10 100 0.01 0.1 1 |y |, forward transfer admittance (s ) fs tbd v , drain source voltage (v) ds fi g . 12 capacitance variation 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 18 20 c, capacitance (pf) tbd
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